Galaxy Century Microelectronics 3DD13002
High Voltage Fast Switching NPN Power Transistor
| Part No. | 3DD13002 |
|---|---|
| Datasheet | 3DD13002 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | High Voltage Fast Switching NPN Power Transistor |
| Buy | Stock & Price |
FEATURES
● High speed switching.● Small flat package. Pb Lead-free
APPLICATIONS
● High voltage switch mode application. ORDERING INFORMATION Type No. Marking 3DD13002 13002 SOT-89S Package Code SOT-89S MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 600 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 1 PC Collector Dissipation 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A mW ℃ Z009 Rev.A 1 Production specification High Voltage Fast Switching NPN Power Transistor 3DD13002ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO I
