Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002/ 3DD13002B
FEATURE Power dissipation PCM: Collector current ICM: 900
TRANSISTOR (NPN)
TO-92
1. EMITTER mW (Tamb=25℃)
2. COLLECTOR
3. BASE
3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) Collector-emitter saturation voltage...
