3DD13002
Overview
- EMITTER mW (Tamb=25℃)
- COLLECTOR
- BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1 2 3
| Part | 3DD13002 |
|---|---|
| Description | TRANSISTOR |
| Category | Transistor |
| Manufacturer | Jiangsu Changjiang |
| Size | 52.23 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 3DD13002 | TRANSYS Electronics | Plastic-Encapsulated Transistors |
| 3DD13003F | JCET | NPN Transistor |
| 3DD13003HA1 | Huajing Microelectronics | Silicon NPN bipolar transistor |
| 3DD13003SUD | Huajing Microelectronics | Silicon NPN Transistor |
| 3DD13003S1D | Huajing Microelectronics | Silicon NPN Transistor |