• Part: 3DD13003B
  • Description: NPN Transistor
  • Manufacturer: JIANGSU CHANGJIANG
  • Size: 119.63 KB
Download 3DD13003B Datasheet PDF
3DD13003B page 2
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Datasheet Summary

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003B TRANSISTOR( NPN ) Features - power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 700 400 9 1.5 0.9 150 -55-150 Units V V V A W ℃ ℃ TO-92 1. EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown...