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3DD13003B - NPN Plastic-Encapsulated Transistor

Key Features

  • Power switching.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente 3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Power switching applications Collector   Base  Emitter TO-92 AD B REF. A Millimeter Min. Max. 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E CF E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 GH K 0.36 0.76 Emitter Collector Base J ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 700 400 9 1.