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3DD13005 Datasheet PDF

SeCoS Halbleitertechnologie GmbH 3DD13005

NPN Plastic-Encapsulated Transistor

Part No. 3DD13005
Datasheet 3DD13005 Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description NPN Plastic-Encapsulated Transistor
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3DD13005 datasheet page 1 preview

FEATURES

Power switching applications TO-220J

ABSOLUTE MAXIMUM RATINGS

(TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 700 400 9 4 2 150, -55~150 Unit V V V A W ° C

ELECTRICAL CHARACTERISTICS

(TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat)1 VCE(sat)2 VBE(sat) fT tF tS Min. 700 400 9 20 5 5 1.8 Typ. - Max. 1 0.1 0.05 30 0.3 0.8 1.6 0.6 6.6 Unit V V V mA mA Test Condition IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=700V, IE=0 VC...