Datasheet4U Logo Datasheet4U.com

3DD13002 Datasheet

The 3DD13002 is a NPN Transistors. Download the datasheet PDF and view key features and specifications below.

Part Number3DD13002
ManufacturerKexin Semiconductor
Overview SMD Type NPN Transistors 3DD13002 Transistors ■ Features ● Collector Current Capability IC=1A ● Collector Emitter Voltage VCEO=400V ● Power Switching Applications 1.70 0.1 0.42 0.1 0.46 0.1 1.B.
* Collector Current Capability IC=1A
* Collector Emitter Voltage VCEO=400V
* Power Switching Applications 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter
* Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector C.
Part Number3DD13002
DescriptionHigh Voltage Fast Switching NPN Power Transistor
ManufacturerGalaxy Microelectronics
Overview Production specification High Voltage Fast Switching NPN Power Transistor 3DD13002 FEATURES  High speed switching.  Small flat package. Pb Lead-free APPLICATIONS  High voltage switch mode appli.
* High speed switching.
* Small flat package. Pb Lead-free APPLICATIONS
* High voltage switch mode application. ORDERING INFORMATION Type No. Marking 3DD13002 13002 SOT-89S Package Code SOT-89S MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Bas.
Part Number3DD13002
DescriptionTRANSISTOR
ManufacturerJiangsu Changjiang
Overview JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B FEATURE Power dissipation PCM: Collector current ICM: 900 TRANSISTOR (NPN) TO-92 1. EM. Power dissipation PCM: Collector current ICM: 900 TRANSISTOR (NPN) TO-92 1. EMITTER mW (Tamb=25℃) 2. COLLECTOR 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1 2 3 ELECTRICAL CHARACTERIST.
Part Number3DD13002
DescriptionNPN Transistor
ManufacturerSeCoS Halbleitertechnologie GmbH
Overview Elektronische Bauelemente 3DD13002 0.8A, 600V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications 3 Base. Power switching applications 3 Base TO-92 AD B Collector 2 E CF 1 Emitter G H 1Emitter 2Collector J 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=.

Similar Datasheets

Part Number Manufacturer Description
3DD13002N46 JCET NPN Transistor
3DD13002B1-H Huajing Microelectronics Silicon NPN bipolar transistor
3DD13002B1 Huajing Microelectronics Silicon NPN Transistor
3DD13002S JCET NPN Transistor
3DD13002RUD Huajing Microelectronics Silicon NPN Transistor
3DD13002B1-7 Huajing Microelectronics Silicon NPN Transistor
3DD13002B Weitron Technology Switch Mode NPN Transistors