3DD13002B - Switch Mode NPN Transistors

Weitron Technology

Datasheet Details

Part number	3DD13002B
Manufacturer	Weitron Technology
File Size	116.11 KB
Description	Switch Mode NPN Transistors
Datasheet	3DD13002B Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
3DD13002B	TRANSISTOR	Jiangsu Changjiang
3DD13002B1	Silicon NPN Transistor	Huajing Microelectronics
3DD13002B1-7	Silicon NPN Transistor	Huajing Microelectronics
3DD13002B1-H	Silicon NPN bipolar transistor	Huajing Microelectronics
3DD13002	High Voltage Fast Switching NPN Power Transistor	GME

Other Datasheets by Weitron Technology

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

3DD13002B Switch Mode NPN Transistors TO-92 www.DataSheet4U.com 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation T A =25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 400 600 6.0 1.0 1.0 150 -55 to +150 Unit Vdc Vdc Vdc Adc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 600 Vdc, IE=0) Emitter Cutoff Current (VEB= 6.0Vd c, IC =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 400 600 6.