• Part: 3DD13002
  • Description: Plastic-Encapsulated Transistors
  • Category: Transistor
  • Manufacturer: TRANSYS Electronics
  • Size: 85.17 KB
3DD13002 Datasheet (PDF) Download
TRANSYS Electronics
3DD13002

Overview

  • 25 W (Tamb=25℃)
  • COLLECTOR
  • EMITTER Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) fT tf ts 1 2 3 unless otherwise specified) Test conditions MIN 600 400 6 100 100 9 5 0.8 1.1 5 0.5 2.5 V V MHz µs µs 40 TYP MAX UNIT V V V µA µA Ic= 100µA, IE=0 Ic=1mA, IB=0 IE= 100µA, IC=0 VCB= 600V, IE=0 VEB= 6V, IC=0 VCE= 10V, IC= 200 mA VCE= 10V, IC=250 µA IC=200mA, IB= 40 mA IC=200mA, IB= 40 mA VCE=10V, Ic=100mA f =1MHz IC=1A, IB1=-IB2=0.2A VCC=100V