3DD13001
3DD13001 is manufactured by TRANSYS Electronics.
Transys
Electronics
L I M I T E D
TO-251 Plastic-Encapsulated Transistors
Features
Power dissipation PCM: 1.2 W (Tamb=25℃)
1. BASE 2. COLLECTOR 3EMITTER
TRANSISTOR (NPN)
TO-251
.
Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage...
