Download 3DD13009NL Datasheet PDF
Inchange Semiconductor
3DD13009NL
DESCRIPTION - High breakdown voltage - High switching speed - High current capability - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Energy-saving ligh - High frequency switching power supply - High frequency power transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current Base Current-Peak VALUE UNIT TO-220 Collector Power Dissipation TC=25℃ TO-3PN Ti Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER...