NPN Transistor
| Part number | 3DD13009NL |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 248.94 KB |
| Description | NPN Transistor |
| Datasheet | 3DD13009NL-INCHANGE.pdf |
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 1.6A ICBO Collector Cutoff Current VCB= 600V; IE=0 IEBO Emitter Cutoff Current VEB=9V;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
3DD13009 | NPN Transistor | LGE |
| Dayan Technology | 3DD13009 | NPN Transistor | Dayan Technology |
 |
3DD13009 | NPN Silicon Epitaxial Planar Transistor | GME |
 |
3DD13009A8 | Silicon NPN Transistor | Huajing Microelectronics |
|
3DD13009A9 | Silicon NPN bipolar transistor | Huajing Microelectronics |
| Part Number | Description |
|---|---|
| 3DD13009 | NPN Transistor |
| 3DD13009K | NPN Transistor |
| 3DD13009N | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |
| 3DD101C | NPN Transistor |
| 3DD101D | NPN Transistor |
