The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NPN Silicon Epitaxial Planar Transistor 3DD13009
Features
Low switch loss Low reverse leakage current Good high temperature characteristics
Mechanic al Data
Case: TO-220AB Molding compound: UL flammability classification rating 94V-0 Terminals: Tin-plated; solderability per MIL-STD-202, Method 208
TO-220AB
Ordering Information
Part Number 3DD13009
Package TO-220AB
Shipping Quantity 50 pcs / Tube
Marking Code 3DD13009
Maximum Ratings (@ TA = 25℃ unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Collector Current (Pulse) Base Current (Continuous) Base Current (Pulse)
Symbol VCBO VCEO VEBO IC ICM IB IBM
Value 700 400 9 12 24 6 12
Unit V V V A A A A
Th