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3DD13003 - High Voltage Fast Switching NPN Power Transistor

Key Features

  • PC=1W(Mounted on ceramic substrate).
  • High speed switching.
  • Die size:1.34.
  • 1.34.
  • Small flat package. Pb Lead-free.

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Production specification High Voltage Fast Switching NPN Power Transistor 3DD13003 FEATURES  PC=1W(Mounted on ceramic substrate).  High speed switching.  Die size:1.34*1.34  Small flat package. Pb Lead-free APPLICATIONS  Mainly used for compact electronic energy saving lamps, electronic ballast and mobile phone chargers power switch circuit ORDERING INFORMATION Type No. Marking 3DD13003 13003 SOT-89S Package Code SOT-89S MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 600 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 9 IC Collector Current -Continuous 1.3 PC Collector Dissipation 0.5 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A W ℃ Z001 Rev.A www.gmesemi.