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3DD13001 - High Voltage Fast Switching NPN Power Transistor

Key Features

  • PC=350mW(Mounted on ceramic substrate). Pb.
  • High speed switching. Lead-free.
  • Small flat package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001 FEATURES  PC=350mW(Mounted on ceramic substrate). Pb  High speed switching. Lead-free  Small flat package. APPLICATIONS  High voltage switch mode application. ORDERING INFORMATION Type No. Marking 3DD13001 13001 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 600 V 400 V 7V 0.2 A 350 mW -55 to +150 ℃ C186 Rev.A www.gmesemi.