• Part: 3DD13001
  • Description: High Voltage Fast Switching NPN Power Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 216.84 KB
Download 3DD13001 Datasheet PDF
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Datasheet Summary

Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001 Features - PC=350mW(Mounted on ceramic substrate). Pb - High speed switching. Lead-free - Small flat package. APPLICATIONS - High voltage switch mode application. ORDERING INFORMATION Type No. Marking SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 600 V 400 V 7V 0.2 A 350 mW -55 to +150 ℃ C186 Rev.A .gmesemi....