Kexin Electronics 3DD13001
NPN Transistors
| Part No. | 3DD13001 |
|---|---|
| Datasheet | 3DD13001 Download |
| Manufacturer | Kexin Electronics |
| Description | NPN Transistors |
| Buy | Stock & Price |
FEATURES
● Collector-emitter Voltage: V(BR)CEO=400V● Collector Current: IC=0.2A 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 600 400 7 0.2 0.5 150 -55 to 150 Unit V V V A W ℃ ℃●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base Breakdown voltage Collector-base cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Fall time Storage time Transition frequency Symbol Testconditons V(BR)CBO IC = 100μA , IE = 0 V(BR)CEO IC = 1mA , IB = 0 V(BR)EBO IE = 100μA , IC = 0 ICBO VCB = 600V , IE = 0 IEBO VEB=7V,IC=0 VCE = 20V , IC = 20mA hFE VCE = 10V , IC = 0.25mA VCE(sat) IC= 50mA, IB= 10 mA...