Weitron Technology S8050
NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg S8050 TO-92 1. EMITTER 1 2. BASE 3. COLLECTOR 23 Value 25 40 5.0 500 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C CELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) Collector Cutoff Current (VCE= 20 Vdc, IB =0) Collector Cutoff Current (VCB= 40 Vdc, IE=0) Emitter Cutoff Current (VEB= 3.0Vdc, I C =0) Symbol Min Max Unit V(BR)CEO 25 - Vdc V(BR)CBO 40 - V(BR)EBO 5.0 - ICE0 - 0.1 Vdc Vdc uAdc ICBO - 0.1 uAdc IEBO - 0.1 uAdc WEITRON S8050ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP ON CHARACTERISTICS DC Current Gain (IC= 50 Adc, VCE=1.0 V...