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S8050 - Silicon NPN Transistor

Key Features

  • High Collector Current. (IC= 500mA).
  • Complementary To S8550. Pb Lead-free.
  • Excellent HFE Linearity.
  • High total power dissipation. (PC=300mW). S8050.

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Other Datasheets by Galaxy Microelectronics

Part Number Description
S8050W Silicon Transistor

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 500mA).  Complementary To S8550. Pb Lead-free  Excellent HFE Linearity.  High total power dissipation.(PC=300mW). S8050 APPLICATIONS  High Collector Current.. ORDERING INFORMATION Type No. Marking S8050 J3Y SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 25 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 500 PC Collector Dissipation 300 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C079 Rev.A www.gmesemi.