Galaxy Century Microelectronics S8050
Silicon NPN Transistor
| Part No. | S8050 |
|---|---|
| Datasheet | S8050 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High Collector Current.(IC= 500mA).● Complementary To S8550. Pb Lead-free
● Excellent HFE Linearity.
● High total power dissipation.(PC=300mW). S8050
APPLICATIONS
● High Collector Current.. ORDERING INFORMATION Type No. Marking S8050 J3Y SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 25 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 500 PC Collector Dissipation 300 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C079 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor S8050ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter break
