Galaxy Century Microelectronics S8050W
Silicon Transistor
| Part No. | S8050W |
|---|---|
| Datasheet | S8050W Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Transistor |
| Buy | Stock & Price |
FEATURES
z High Collector Current.(IC= 500mA). z Complementary To S8550W. z Excellent HFE Linearity. Pb Lead-freeAPPLICATIONS
z High Collector Current. ORDERING INFORMATION Type No. Marking S8050W J3Y Production specification S8050W SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 40 25 5 500 300 -55 to +150 Units V V V mA mW ℃ F095 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor S8050WELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=100μA,IE=0 IC=1mA,IB=
