Key Features
- Static drain-source on-resistance: RDS(on) ≤4.5mΩ
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- reliable device for use in a wide variety of applications
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
IRFB4110GPbF
|
International Rectifier |
Power MOSFET |
|
IRFB4110PBF
|
International Rectifier |
HEXFET Power MOSFET |
|
IRFB4110QPBF
|
International Rectifier |
HEXFET Power MOSFET |
|
IRFB4110G
|
Inchange Semiconductor |
N-Channel MOSFET |
|
IRFB4115
|
Inchange Semiconductor |
N-Channel MOSFET |
|
IRFB4115PBF
|
International Rectifier |
Power MOSFET |
|
IRFB4115
|
International Rectifier |
Power MOSFET |
|
IRFB4115GPbF
|
International Rectifier |
Power MOSFET |
|
IRFB4115G
|
Inchange Semiconductor |
N-Channel MOSFET |
