Datasheet4U Logo Datasheet4U.com

IRFB4110G - N-Channel MOSFET

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤4.5mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFB4110GPbF Power MOSFET International Rectifier
IRFB4110 N-Channel MOSFET Transistor Inchange Semiconductor
IRFB4110 HEXFET Power MOSFET International Rectifier
IRFB4110PBF HEXFET Power MOSFET International Rectifier
IRFB4110QPBF HEXFET Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFB4115 N-Channel MOSFET
IRFB4115G N-Channel MOSFET
IRFB4127 N-Channel MOSFET
IRFB4137 N-Channel MOSFET
IRFB41N15D N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IRFB4110G， IIRFB4110G ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 180 IDM Drain Current-Single Pulsed 670 PD Total Dissipation @TC=25℃ 370 Tj Max.