| Part Number | FDMD8900 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Title | N-Channel Power MOSFET |
| Description | This devices utilizes two optimized N−ch FETs in a dual 3.3 x 5 mm thermally enhanced power package. The HS Source and LS drain are internally con... |
| Features |
Q1: N−Channel
• Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A • Max rDS(on) = 5 mW at VGS = 4.5 V, ID = 17 A • Max rDS(on) = 6.5 mW at VGS = 3.8 V, ID = 15 A • Max rDS(on) = 8.3 mW at VGS = 3.5 V, ID = 14 A Q2: N−Channel • Max rDS(on) = 5.5 mW at VGS =... |
| Datasheet |
 FDMD8900 Datasheet
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