Part Number | BF543 |
Manufacturer | Siemens Semiconductor Group |
Title | Silicon N Channel MOS FET Triode |
Description | Silicon N Channel MOS FET Triode Preliminary Data q q BF 543 For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS ... |
Features |
D = 10 µA, – VGS = 4 V Gate-source breakdown voltage ± IGS = 10 mA, VDS = 0 ± Values typ. max. Unit V(BR)DS ±V(BR)GSS ± IGSS 20 7 – 2.0 – – – – 4 0.7 – 12 50 6.0 1.5 V Gate cutoff current VGS = 6 V, VDS = 0 nA mA V Drain current VDS = 10 V,... |
Datasheet | BF543 Datasheet |