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Silicon Matched Datasheet



Part Number Description Manufacture
A1270
PNP Silicon Transistor
ector Emitter Saturation Voltage at -IC=100mA,-IB=10mA Base Emitter Voltage at
  –VCE=1V,-IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz hFE hFE hFE hFE -ICBO -IEBO -VCEsat -VBE fT COB 70 120 2
Manufacture
SEMTECH
2N2222
NPN Silicon Transistor
Manufacture
SEMTECH
C1815
Silicon NPN Transistor
nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de
Manufacture
Toshiba Semiconductor
D718
Silicon NPN Power Transistors
ion voltage IC=5A; IB=0.5A VBE Base-emitter voltage IC=5A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=5V Cob Output
Manufacture
SavantIC
C5198
Silicon NPN Transistor
hin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
Manufacture
Toshiba Semiconductor
K2837
Silicon N-Channel MOSFET
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating condition
Manufacture
Toshiba Semiconductor
2N3906
Silicon PNP Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 255C . . . . . . . . . . . . . . . .
Manufacture
NTE
S8050
Silicon NPN Transistor

 High Collector Current.(IC= 500mA).
 Complementary To S8550. Pb Lead-free
 Excellent HFE Linearity.
 High total power dissipation.(PC=300mW). S8050 APPLICATIONS
 High Collector Current.. ORDERING INFORMATION Type No. Marking S8050 J3Y
Manufacture
GME
BD139
Silicon NPN Transistor
. Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Cu
Manufacture
Toshiba
C4106
NPN Triple Diffused Planar Silicon Transistor

· High breakdown voltage and high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4106] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2.
Manufacture
Sanyo Semicon Device

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