The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA
Discrete Semiconductors
Transistor
Silicon PNP Epitaxial Type (PCT Process)
For General Purpose Switching and Amplifier Applications
Features • Complementary to 2SC3281 • Recommended for 100W High Fidelity Audio Frequency
- Amplifier Output Stage
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range
VCBO -200
V
VCEO -200
V
VEBO -5
V
IC -15 A
IB -1.
2SA1302 Datasheet
