Datasheet Summary
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Strobe Flash Applications Medium Power Amplifier Applications
Unit: mm
- High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE =
- 1 V, IC =
- 0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE =
- 1 V, IC =
- 4 A)
- Low saturation voltage: VCE (sat) =
- 0.5 V (max) (IC =
- 2 A, IB =
- 50 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IB PC Tj Tstg
-20 -20...
