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2SA1300 - PNP EPITAXIAL SILICON TRANSISTOR

General Description

Strobo Flash Applications.

Medium Power Amplifier Applications.

Key Features

  • High DC Current Gain and Excellent hFE Linearity.
  • hFE(1)=140-600, (VCE= -1V,IC= -0.5A).
  • hFE(2)=60(Min. ),120(Typ. ),(VCE= -1V,IC= -4A).
  • Low Saturation Voltage.
  • VCE (sat)= -0.5V(Max. ), (IC= -2A,IE= -50mA) 1 SOT-89 1: Emitter 2: Collector 3:Base.

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UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) *Low Saturation Voltage *VCE (sat)= -0.5V(Max.), (IC= -2A,IE= -50mA) 1 SOT-89 1: Emitter 2: Collector 3:Base ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulsed (Note) www.DataSheet4U.