| Part Number | 2SA1300 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm · High DC current gain and excellent hFE linearity . cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = -20 V, IE = 0 IEBO VEB = -6 V, IC = 0 V (BR) CEO IC = -10 mA, IB = 0 V (BR) . |
2SA1300 Datasheet and Specifications PDF
The 2SA1300 is a TRANSISTOR.
Key Specifications
| Package | TO-92 |
|---|---|
| Max Operating Temp | 150 °C |
| Part Number | 2SA1300 Datasheet |
|---|---|
| Description | PNP Silicon Epitaxial Planar Transistor |
| Manufacturer | BLUECOLOUR |
| Overview | 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain.. . |
| Part Number | 2SA1300 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Overview |
2SA1300
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
-2 A, -20 V PNP Plastic Encapsulated Transistor
FEATURES
TO-92
High DC Current gain and .
* * TO-92 High DC Current gain and excellent hFE linearity Low Saturation Voltage G H CLASSIFICATION OF hFE(1) Product-Rank Range 2SA1300-Y 140~280 2SA1300-GR 200~400 2SA1300-BL 300~600 K J A B D Emitter Collector *Base REF. A B C D E F G H J K E C F Millimeter Min. Max. 4.40 4.70 4.30 4. |
| Part Number | 2SA1300 Datasheet |
|---|---|
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview | *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1. *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) *Low Saturation Voltage *VCE (sat)= -0.5V(Max.), (IC= -2A,IE= -50mA) 1 SOT-89 1: Emitter 2: Collector 3:Base ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER Collect. |