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DC COMPONENTS CO., LTD.
R
2SA1300
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use Strobe flash and medium power amplifier applications.
Pinning
1 = Emitter 2 = Collector 3 = Base
.190(4.83) .170(4.33) .190(4.83) .170(4.33)
TO-92
2 Typ 2 Typ
o
o
Absolute Maximum Ratings(TA=25
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCES VCEO VEBO IC IC IB PD TJ TSTG
o
C) Rating -20 -20 -10 -6 -2 -5 -2 750 +150 -55 to +150 Unit V V V V A A A mW
o o
Symbol
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.