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2SA1308 - Silicon PNP Transistor

Key Features

  • . Low Collector Saturation Voltage : VcE(sat)=-0.4V(Max. ) at Ic=-3A . High Speed Switching Time : t s tg=l. 0-«s(Typ. . Complementary to 2SC3308.

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Datasheet Details

Part number 2SA1308
Manufacturer Toshiba
File Size 132.20 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA1308 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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:) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES . Low Collector Saturation Voltage : VcE(sat)=-0.4V(Max.) at Ic=-3A . High Speed Switching Time : t s tg=l. 0-«s(Typ. . Complementary to 2SC3308. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO -100 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -80 V -7 V Collector Current DC Pulse Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range ic ICP PC Tj Tstg ELECTRICAL CHARACTERISTICS (Ta==25°C) CHARACTERISTIC SYMBOL -5 A -8 30 W 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER 150 °C -55-150 °C EIAJ TOSHIBA 2-10K1A Weight : 2.08 TEST CONDITION MIN. TYP. MAX.