Datasheet Details
| Part number | 2SA1308 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.89 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1308_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1308 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.89 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1308_InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC3308 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 1.0 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1308 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3.0A;
IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3.0A;
IB= -0.15A ICBO Collector Cutoff Current VCB= -100V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1308 | Silicon PNP Transistor | Toshiba |
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2SA1308 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
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| 2SA1332 | POWER TRANSISTOR |
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| 2SA1352 | Silicon PNP Power Transistor |