The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
:
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
1
2SA130 2SA1306A
I2SA1306B
POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES . High Transition Frequency : ff=100MHz (Typ.) . Complementary to 2SC3298, 2SC3298A, 2S C3298B
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
2SA1306 2SA1306A 2SA1306B
VcBO
Collector-Emitter Voltage
2SA1306 2SA1306A 2SA1306B
v CEO
Emitter-Base Voltage Collector Current
VeBO ic
Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature
Storage Temperature Range
IB PC T
J
T stg
RATING -160 -180 -200 -160 -180 -200
-5 -1.5 -0.15
20
150
-55-150
UNIT
V
V
V A A W °C °C
Unit in iTim
10.3MAX.
7.0 #3.2±0.2
/*l
^"13 S
'A wd o H
1
1
1.4
LftSS 0.76-0.15
i
2.5 4x0.2 5
1 1.2
M S
S
2.
2SA1306 Datasheet
