2SA1306
2SA1306 is Silicon PNP Transistor manufactured by Toshiba.
:
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA130 2SA1306A
I2SA1306B
POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
Features
. High Transition Frequency : ff=100MHz (Typ.) . plementary to 2SC3298, 2SC3298A, 2S C3298B
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
2SA1306 2SA1306A 2SA1306B
VcBO
Collector-Emitter Voltage
2SA1306 2SA1306A 2SA1306B v CEO
Emitter-Base Voltage Collector Current
VeBO ic
Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature
Storage Temperature Range
IB PC T
T stg
RATING -160 -180 -200 -160 -180 -200
-5 -1.5 -0.15
-55-150
UNIT
V A A W °C °C
Unit in iTim
10.3MAX.
7.0...
