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2SA1306A Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistors.

General Description

·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A ·Complement to Type 2SC3298/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.

·Driver stage amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SA1306 -160 V 2SA1306A -180 2SA1306 -160 VCEO Collector-Emitter Voltage V 2SA1306A -180 VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -5 V -1.5 A -0.15 A 20 W 150 ℃ -55~150 ℃ INCHANGE Semiconductor 2SA1306/A isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor 2SA1306/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

2SA1306A Distributor