Datasheet Details
| Part number | 2SA1301 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.01 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1301_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1301.
| Part number | 2SA1301 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.01 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1301_InchangeSemiconductor.pdf |
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·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complement to Type 2SC3280 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1301 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1301 | Silicon PNP Transistor | Toshiba |
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2SA1301 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1302 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |
| 2SA1327 | POWER TRANSISTOR |
| 2SA1329 | POWER TRANSISTOR |
| 2SA1332 | POWER TRANSISTOR |
| 2SA1333 | POWER TRANSISTOR |
| 2SA1352 | Silicon PNP Power Transistor |