High Power Dissipation
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
Complement to Type 2SC3280
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power amplifier applications
Recommend for 80W high fidelity au
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isc Silicon PNP Power Transistor
2SA1301
DESCRIPTION ·High Power Dissipation ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·Complement to Type 2SC3280 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1.2
A
120
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SA1301 Datasheet
