Datasheet Details
| Part number | 2SA1304 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.52 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1304_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1304.
| Part number | 2SA1304 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.52 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1304_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Complement to Type 2SC3296 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -150 V -150 V -5 V -1.5 A -0.5 A 2 W 20 150 ℃ -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1304 | TRANSISTOR | Toshiba Semiconductor |
 |
2SA1304 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SA1302 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |
| 2SA1327 | POWER TRANSISTOR |
| 2SA1329 | POWER TRANSISTOR |
| 2SA1332 | POWER TRANSISTOR |
| 2SA1333 | POWER TRANSISTOR |
| 2SA1352 | Silicon PNP Power Transistor |