2SA1304 Datasheet | SavantIC

ESCRIPTION - With TO-220Fa package - plement to type 2SC3296 - High breakdown voltage APPLICATIONS - Power amplifier applications - Vertical output applicatios PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -1.5 -0.5 20 W V A A UNIT V Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-10m A , IB=0 IC=-500m A; IB=-50m A IC=-500m A ; VCE=-10V VCB=-120V;IE=0 VEB=-5V; IC=0 IC=-500m A ; VCE=-10V IE=0; VCB=-10V,f=1MHz IC=-500m A ; VCE=-10V 40 55 4 MIN -150 -1.5 -0.85 -10 -10 140 p F MHz TYP. MAX UNIT V V V µA µA SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO h FE Cob f T Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) Savant IC Semiconductor .. Product Specification Silicon PNP Power...