Datasheet Details
| Part number | 2SA1302 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 136.97 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1302_InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor.
| Part number | 2SA1302 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 136.97 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1302_InchangeSemiconductor.pdf |
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·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) ·Complement to Type 2SC3281 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -1.5 A PC 150 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1302 TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1302 | Silicon PNP Transistor | Toshiba |
| Part Number | Description |
|---|---|
| 2SA1301 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |
| 2SA1327 | POWER TRANSISTOR |
| 2SA1329 | POWER TRANSISTOR |
| 2SA1332 | POWER TRANSISTOR |
| 2SA1333 | POWER TRANSISTOR |
| 2SA1352 | Silicon PNP Power Transistor |