| Part Number | 2SA1306 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 2SA130 2SA1306A I2SA1306B POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Transition Frequency : ff=100MHz (Typ.) . Co. . High Transition Frequency : ff=100MHz (Typ.) . Complementary to 2SC3298, 2SC3298A, 2S C3298B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SA1306 2SA1306A 2SA1306B VcBO Collector-Emitter Voltage 2SA1306 2SA1306A 2SA1306B v CEO Emitter-Base Voltage Collector Curr. |
2SA1306 Datasheet and Specifications PDF
The 2SA1306 is a Silicon PNP Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SA1306 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistors |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Complement to Type 2SC3298 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . or-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA MIN TYP. MAX UNIT -160 V -1.5 V VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -5V -1.0 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -1.0 μA IEBO Emitter Cutoff Cu. |
| Part Number | 2SA1306 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220Fa package ·Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Bas. 2SA1306B VCEsat VBE ICBO IEBO hFE Cob fT Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency SYMBOL 2SA1306 2SA1306A 2SA1306B CONDITIONS MIN -160 TYP. MAX UNIT IC=10mA , IB=0 -180 . |