Inchange Semiconductor 2SA1306
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1306 |
|---|---|
| Datasheet | 2SA1306 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Good Linearity of hFE●High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)
●Complement to Type 2SC3298
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power amplifier applications.●Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -5 V -1.5 A -0.15 A 20 W 150 ℃ -55~150 ℃ INCHANGE Semiconductor 2SA1306 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor 2SA1306ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA MIN TYP.
