2SA1306 - Silicon PNP Power Transistors

Inchange Semiconductor

General Description

Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) Complement to Type 2SC3298 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Driver stage amplifier applicat

📥 Download Datasheet

2SA1306 silicon pnp power transistors by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SA1306
Manufacturer	Inchange Semiconductor
File Size	192.31 KB
Description	Silicon PNP Power Transistors
Datasheet	2SA1306 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SA1306	Silicon PNP Transistor	Toshiba
2SA1306	SILICON POWER TRANSISTOR	SavantIC
2SA1306A	PNP Transistor	Toshiba
2SA1306A	SILICON POWER TRANSISTOR	SavantIC
2SA1306B	SILICON POWER TRANSISTOR	SavantIC

Other Datasheets by Inchange Semiconductor

Part Number	Description
2SA1306A	PNP Transistor
2SA1307	PNP Transistor
2SA1328	PNP Transistor
2SA1358-Z	PNP Transistor
2SA1386A	PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon PNP Power Transistors DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Complement to Type 2SC3298 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -5 V -1.5 A -0.15 A 20 W 150 ℃ -55~150 ℃ INCHANGE Semiconductor 2SA1306 isc website： www.iscsemi.