logo

WNM2306

Will Semiconductor
Part Number WNM2306
Manufacturer Will Semiconductor
Title N-Channel Power MOSFET
Description The WNM2306 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with l...
Features SOT-23 D 3 12 GS Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WT6* WT6 * = Device Code = Month (A~Z) Marki...

Datasheet PDF File WNM2306 Datasheet

WNM2306   WNM2306   WNM2306  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map