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AMI SEMICONDUCTOR
AMI SEMICONDUCTOR

N04L1630C2B Datasheet Preview

N04L1630C2B Datasheet

4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY

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N04L1630C2B pdf
AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
N04L1630C2B
Advance wInwwfo.DramtaShaeetti4oU.ncom
4Mb Ultra-Low Power Asynchronous CMOS SRAMs
256K × 16 bit POWER SAVER TECHNOLOGY TM
Overview
The N04L1630C2B is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N04L1630C2B is
optimized for the ultimate in low power and is
suited for various applications where ultra-low-
power is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
operating power while improving the performance
over standard SRAMs. The device can operate
over a very wide temperature range of -40oC to
+85oC and is available in JEDEC standard
packages compatible with other standard 256Kb x
16 SRAMs.
Features
• Wide Power Supply Range
2.7 to 3.6 Volts
• Very low standby current
1uA (Typical)
• Very low operating current
2.0mA at 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Very fast output enable access time
30ns OE Access Time
55ns Random Access Time
30ns Page Mode Access Time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• RoHS Compliant TSOP and BGA packages
Product Family
Part Number
Package Type
Operating
Power
Speed
Temperature Supply (Vcc) Options
N04L1630C2BB2 48-BGA Green
-40oC to +85oC 2.7V - 3.6V
N04L1630C2BT2 44-TSOP II Green
55ns
70ns
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
1µA 2 mA @ 1MHz
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
1



AMI SEMICONDUCTOR
AMI SEMICONDUCTOR

N04L1630C2B Datasheet Preview

N04L1630C2B Datasheet

4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY

No Preview Available !

N04L1630C2B pdf
AMI Semiconductor, Inc.
Pin Configurations (4Mb)
A4
A3
A2
A1
A0
CE1
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
TSOP II
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
CE2
A8
A9
A10
A11
A17
N04L1630C2B
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123456
A LB OE A0 A1 A2 CE2
B I/O8 UB A3 A4 CE1 I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H NC A8 A9 A10 A11 NC
48 Pin BGA (top)
Pin Descriptions
Pin Name
A0-A17
WE
CE1
CE2
OE
LB
UB
I/O0-I/O7
I/O8-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable 1 Input
Chip Enable 2 Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Lower Byte Data Input/Output
Upper Byte Data Input/Output
Power
Ground
Not Connected
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.


Part Number N04L1630C2B
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY
Maker AMI SEMICONDUCTOR
Total Page 12 Pages
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