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TARF1502U Datasheet Preview

TARF1502U Datasheet

NPN Planer RF Transistor

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TARF1502U pdf
TARF1502U
NPN Planer RF TRANSISTOR
DESCRIPTION
The TARF1502U is a low Noise figure and good associated
gain performance at UHF,VHF and Microwave frequencies
It is suitable for a high density surface mount since
transistor has been SOT323 package
FEATURES
o Low Noise Figure
N.F = 1.1dB TYP. @ f=1GHz, VCE=3V, Ic=5mA
N.F = 1.5dB TYP. @ f=2GHz, VCE=3V, Ic=5mA
o High Gain
MSG = 17.5dB TYP. @ f=1GHz, VCE=3V, Ic=15mA
MAG = 11.5dB TYP. @ f=2GHz, VCE=3V, Ic=15mA
o High Transition Frequency
fT = 12GHz TYP. @ f=2GHz, VCE=3V, Ic=15mA
PIN CONFIGURATION
PIN NO SYMBOL DESCRIPTION
1 B Base
2 E Emitter
3 C Collector
MARKING : AC1
MAXIMUM RATINGS
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
Ic
PT
TSTG
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
CONDITION
Open Emitter
Open Base
Open Collector
Ts = 60
VALUE
25
12
2.5
35
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
www.tachyonics.co.kr
- 1/12 -
Sep-2002



AUK
AUK

TARF1502U Datasheet Preview

TARF1502U Datasheet

NPN Planer RF Transistor

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TARF1502U pdf
TARF1502U
Electrical Characteristics ( TA = 25 )
SYMBOL
PARAMETER
CONDITION
VALUE
Unit
VCBO
VCEO
ICBO
IEBO
hfe
fT
CCB
Collector-Base Voltage ICE = 100uA, IE = 0
Collector-Emitter Voltage ICE = 100uA, IB = 0
Collector-Cut-off current VCB = 10V, IE = 0
Emitter-Cut-off current VEB = 1V, IC = 0
D.C current Gain
VCE = 3V, Ic = 15mA
Transition Frequency
VCE = 3V, Ic = 15mA
Collector-Base Capacitance VCB = 10V, f = 1MHz
20 25
V
12 14
V
300 n A
100 n A
100 150
12 GHz
0.47 pF
Performance Characteristics
SYMBOL
PARAMETER
CONDITION
VCE=3V, Ic=5mA,f=1GHz
[S21]2 Insertion Power Gain
VCE=3V, Ic=15mA,f=1GHz
VCE=3V, Ic=5mA,f=2GHz
VCE=3V, Ic=15mA,f=2GHz
MSG
Maximum Stable Gain
VCE=3V, Ic=5mA,f=1GHz
VCE=3V, Ic=15mA,f=1GHz
MAG
VCE=3V, Ic=5mA,f=2GHz
Maximum Available Gain
VCE=3V, Ic=15mA,f=2GHz
NFmin Minium Noise Figure
VCE=3V, Ic=5mA,f=1GHz
VCE=3V, Ic=5mA,f=2GHz
rn Noise Resistance
VCE=3V, Ic=5mA,f=1GHz
VCE=3V, Ic=5mA,f=2GHz
VCE=3V, Ic=5mA,f=1GHz
GA Associated Gain
VCE=3V, Ic=15mA,f=1GHz
VCE=3V, Ic=5mA,f=2GHz
VCE=3V, Ic=15mA,f=2GHz
P-1dB
1dB Compression point
VCE=3V, Ic=15mA,f=1GHz
(Zs=Zsopt, ZL=ZLopt)
VALUE
13
14.5
7
8.5
16
17.5
11
11.5
1.1
1.5
0.06
0.04
14
15.5
9.5
10.5
10
Unit
dB
dB
dB
dB
dBm
www.tachyonics.co.kr
- 2/12 -
Sep-2002


Part Number TARF1502U
Description NPN Planer RF Transistor
Maker AUK
Total Page 12 Pages
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