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Advanced Power Electronics
Advanced Power Electronics

AP2308GEN Datasheet Preview

AP2308GEN Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2308GEN pdf
Advanced Power
Electronics Corp.
AP2308GEN
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Capable of 2.5V gate drive
Lower on-resistance
2KV ESD Capability
Description
D
SOT-23 G
S
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
BVDSS
RDS(ON)
ID
G
20V
600mΩ
1.2A
D
S
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
20
±6
1.2
1
5
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
90
Unit
/W
Data and specifications subject to change without notice
200809041



Advanced Power Electronics
Advanced Power Electronics

AP2308GEN Datasheet Preview

AP2308GEN Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2308GEN pdf
AP2308GEN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=4.5V, ID=1.2A
VGS=2.5V, ID=0.5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=5V, ID=1.2A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±6V
ID=1.2A
VDS=16V
VGS=4.5V
VDS=10V
ID=1.2A
RG=3.3Ω,VGS=5V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=10Ω
VGS=0V
VDS=10V
f=1.0MHz
20 - - V
- 0.1 - V/
- - 600 mΩ
- - 850 mΩ
0.5 - 1.2 V
-1-S
- - 1 uA
- - 10 uA
- - ±10 uA
- 1.2 2 nC
- 0.4 - nC
- 0.3 - nC
- 17 - ns
- 36 - ns
- 76 - ns
- 73 - ns
- 37 60 pF
- 17 - pF
- 13 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
Test Conditions
IS=1.2A, VGS=0V
Min. Typ. Max. Units
- - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad.


Part Number AP2308GEN
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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