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Advanced Power Electronics
Advanced Power Electronics

AP2603GY-HF Datasheet Preview

AP2603GY-HF Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2603GY-HF pdf
Advanced Power
Electronics Corp.
AP2603GY-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Small Package Outline
Surface Mount Device
RoHS Compliant & Halogen-Free
S
D
D
SOT-26
G
D
D
BVDSS
RDS(ON)
ID
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The SOT-26 package is widely used for all commercial-industrial
applications.
G
-20V
65mΩ
-5A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V3
Continuous Drain Current, VGS @ 4.5V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
+12
-5
-4
-20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201208305



Advanced Power Electronics
Advanced Power Electronics

AP2603GY-HF Datasheet Preview

AP2603GY-HF Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2603GY-HF pdf
AP2603GY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4.5A
VGS=-4.5V, ID=-4.2A
VGS=-2.5V, ID=-2.0A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-5V, ID=-2.8A
Drain-Source Leakage Current
VDS=-20V, VGS=0V
Drain-Source Leakage Current (Tj=55oC) VDS=-16V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= +12V, VDS=0V
ID=-4.2A
Gate-Source Charge
VDS=-16V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-15V
Rise Time
ID=-4.2A
Turn-off Delay Time
RG=6Ω
Fall Time
VGS=-10V
Input Capacitance
VGS=0V
Output Capacitance
VDS=-15V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
-20 - - V
- - 53 mΩ
- - 65 mΩ
- - 120 mΩ
-0.5 - -1.2 V
- 10 -
S
- - -1 uA
- - -10 uA
- - +100 nA
- 11.5 16 nC
- 1.5 - nC
- 5 - nC
- 5.5 - ns
- 16.5 - ns
- 42 - ns
- 40 - ns
- 780 1200 pF
- 130 - pF
- 120 - pF
- 7 14 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-1.2A, VGS=0V
IS=-4.2A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 26 - ns
- 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t 10S ; 156/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP2603GY-HF
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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