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Advanced Power Technology
Advanced Power Technology

APT1002RCN Datasheet Preview

APT1002RCN Datasheet

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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APT1002RCN pdf
D
TO-254
G
S APT1002RCN 1000V 5.5A 2.00
POWER MOS IVTM
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol Parameter
VDSS
ID
IDM
VGS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage
PD Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TJ,TSTG Operating and Storage Junction Temperature Range
TL Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise specified.
APT1002RCN
UNIT
1000
Volts
5.5
Amps
22
±30 Volts
150 Watts
1.2 W/°C
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
ID(ON) On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
RDS(ON) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.])
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
MIN
1000
5.5
2
TYP
MAX UNIT
Volts
2.00
250
1000
±100
4
Amps
Ohms
µA
nA
Volts
SAFE OPERATING AREA CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
SOA1
SOA2
ILM
Safe Operating Area
VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
Safe Operating Area
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
Inductive Current Clamped
150
150
5.5
Watts
Amps
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035 Phone: (541) 382-8028
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT1002RCN Datasheet Preview

APT1002RCN Datasheet

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

No Preview Available !

APT1002RCN pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
CDC
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
f = 1 MHz
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8
APT1002RCN
MIN TYP MAX UNIT
15 22
1530
230
80
66
6.2
36
14
13
53
17
1800
325
120
105
9.5
54
28
26
79
34
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
t rr Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
MIN TYP MAX UNIT
5.5
Amps
22
1.3 Volts
450 900 ns
2.5 5 µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX
RθJC
RθJA
Junction to Case
Junction to Ambient
0.80
50
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
UNIT
W/°C
1.0
0.5 D=0.5
0.2
0.1 0.1
0.05 0.05
0.02
0.01
0.01 SINGLE PULSE
Note:
t1
0.005
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT1002RCN
Description N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Maker Advanced Power Technology
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