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Advanced Power Technology
Advanced Power Technology

APT10050JLC Datasheet Preview

APT10050JLC Datasheet

Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

No Preview Available !

APT10050JLC pdf
APT10050JLC
1000V 19A 0.500
POWER MOS VITM
SS
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C and C .
iss rss
Lower gate charge coupled with Power MOS VITM optimized gate layout,
delivers exceptionally fast switching speeds.
• Lower Gate Charge
• Lower Input Capacitance
G D SOT-227
ISOTOP®
"UL Recognized"
D
• Faster Switching
• 100% Avalanche Tested
• Easier To Drive
• Popular SOT-227 Package
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
ALContinuous Drain Current @ TC = 25°C
ICPulsed Drain Current 1
NGate-Source Voltage Continuous
CHGate-Source Voltage Transient
TE NTotal Power Dissipation @ TC = 25°C
D IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
C ALead Temperature: 0.063" from Case for 10 Sec.
AN RMAvalanche Current 1 (Repetitive and Non-Repetitive)
V ORepetitive Avalanche Energy 1
AD INFSingle Pulse Avalanche Energy 4
APT10050JLC
1000
19
76
±30
±40
450
3.6
-55 to 150
300
19
50
2500
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
1000
19
3
0.500
25
250
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT10050JLC Datasheet Preview

APT10050JLC Datasheet

Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

No Preview Available !

APT10050JLC pdf
DYNAMIC CHARACTERISTICS
APT10050JLC
Symbol Characteristic
Test Conditions
MIN TYP MAX
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
5000
600
190
Qg
LQgs
AQgd
ICtd(on)
HNtr
Ctd(off)
TE Ntf
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 10V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6
CED ATIOSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
AN RMSymbol
V OIS
AD INFISM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
170
30
95
18
13
43
8.5
MIN TYP MAX
19
76
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
1.3
t rr Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
960
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
22.0
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.28
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 13.85mH, RG = 25, Peak IL = 19A
APT Reserves the right to change, without notice, the specifications and information contained herein.
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Emitter
Collector
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Emitter
Gate
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058


Part Number APT10050JLC
Description Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
Maker Advanced Power Technology
Total Page 2 Pages
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1 APT10050JLC Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. Advanced Power Technology
Advanced Power Technology
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