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Advanced Power Technology
Advanced Power Technology

APT10M19SVFR Datasheet Preview

APT10M19SVFR Datasheet

POWER MOS V FREDFET

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APT10M19SVFR pdf
APT10M19BVFR
APT10M19SVFR
100V 75A 0.019
POWER MOS V® FREDFET BVFR
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-247
D3PAK
SVFR
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
FAST RECOVERY BODY DIODE
D
TO-247 or Surface Mount D3PAK Package
G
MAXIMUM RATINGS
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT10M19BVFR_SVFR UNIT
www.DataSheet4U.com
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
100 Volts
75
Amps
300
±30 Volts
±40
370 Watts
2.96 W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
75
30
1500
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 37.5A)
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 80V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
100
2
0.019
250
1000
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com



Advanced Power Technology
Advanced Power Technology

APT10M19SVFR Datasheet Preview

APT10M19SVFR Datasheet

POWER MOS V FREDFET

No Preview Available !

APT10M19SVFR pdf
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 50V
ID = 75A @ 25°C
VGS = 15V
VDD = 50V
ID = 75A @ 25°C
RG = 1.6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -75A)
dv/dt Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -75A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr (IS = -75A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
IRRM
Peak Recovery Current
(IS = -75A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
APT10M19BVFR_SVFR
MIN TYP MAX UNIT
5100
1900
800
200
40
92
16
40
50
20
6120
2660
1200
300
60
140
32
80
75
40
pF
nC
ns
MIN TYP MAX UNIT
75 Amps
300
1.3 Volts
5 V/ns
200 ns
350
0.5 µC
1.0
8
12 Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.34
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.53mH, RG = 25, Peak IL = 75A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID75A di/dt 700A/µs VR 100V TJ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.4
0.1
0.05
0.01
0.005
0.001
10-5
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10


Part Number APT10M19SVFR
Description POWER MOS V FREDFET
Maker Advanced Power Technology
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