http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Advanced Power Technology
Advanced Power Technology

APT15GN120BDQ1 Datasheet Preview

APT15GN120BDQ1 Datasheet

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

No Preview Available !

APT15GN120BDQ1 pdf
TYPICAL PERFORMANCE CURVES
®
AP1T2150G0NV120BDQ1(G)
APT15GN120BDQ1
APT15wGwNw.D1a2ta0SBheDetQ4U1.cGom*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
TO-247
GC E
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT15GN120BDQ1(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
45
22
45
45A @ 1200V
195
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RGINT
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA)
Gate Threshold Voltage (VCE = VGE, I C = 600µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
1200
5.0 5.8 6.5
1.4 1.7 2.1
2.0
200
TBD
120
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Units
Volts
µA
nA



Advanced Power Technology
Advanced Power Technology

APT15GN120BDQ1 Datasheet Preview

APT15GN120BDQ1 Datasheet

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

No Preview Available !

APT15GN120BDQ1 pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 15A
TJ = 150°C, RG = 4.37, VGE =
15V, L = 100µH,VCE = 1200V
Inductive Switching (25°C)
VCC = 800V
VGE = 15V
IC = 15A
RG = 4.37
TJ = +25°C
MIN
45
Inductive Switching (125°C)
VCC = 800V
VGE = 15V
IC = 15A
RG = 4.37
TJ = +125°C
APT15GN120BDQ1(G)
TYP MAX UNIT
www.DataSheet4U.com
1200
65 pF
50
9.0 V
90
5 nC
55
10
9
150
110
410
730
950
10
9
170
185
475
1310
1300
A
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.64
1.18
°C/W
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4
aEdond1inisg
the clamped inductive turn-on energy of the IGBT only,
to the IGBT turn-on loss. Tested in inductive switching
without the effect
test circuit shown
of
in
a commutating diode reverse recovery current
figure 21, but with a Silicon Carbide diode.
5
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT15GN120BDQ1
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Maker Advanced Power Technology
Total Page 9 Pages
PDF Download
APT15GN120BDQ1 pdf
Download PDF File
APT15GN120BDQ1 pdf
View for Mobile






Related Datasheet

1 APT15GN120BDQ1 High Speed PT IGBT Microsemi
Microsemi
APT15GN120BDQ1 pdf
2 APT15GN120BDQ1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE Advanced Power Technology
Advanced Power Technology
APT15GN120BDQ1 pdf
3 APT15GN120BDQ1 High Speed PT IGBT Microsemi
Microsemi
APT15GN120BDQ1 pdf
4 APT15GN120BDQ1G High Speed PT IGBT Microsemi
Microsemi
APT15GN120BDQ1G pdf
5 APT15GN120BDQ1G ULTRAFAST SOFT RECOVERY RECTIFIER DIODE Advanced Power Technology
Advanced Power Technology
APT15GN120BDQ1G pdf
6 APT15GN120BDQ1G High Speed PT IGBT Microsemi
Microsemi
APT15GN120BDQ1G pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components