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Advanced Power Technology
Advanced Power Technology

APTGT225DU170 Datasheet Preview

APTGT225DU170 Datasheet

Dual common source Trench Field Stop IGBT Power Module

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APTGT225DU170 pdf
APTGT225DU170
Dual common source
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
C1 C2
Q1
G1
Q2
G2
E1 E2
E
G1 C1 E C2
E1
E2
G2
VCES = 1700V
IC = 225A @ Tc = 80°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
340
225
450
±20
1250
450A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5



Advanced Power Technology
Advanced Power Technology

APTGT225DU170 Datasheet Preview

APTGT225DU170 Datasheet

Dual common source Trench Field Stop IGBT Power Module

No Preview Available !

APTGT225DU170 pdf
APTGT225DU170
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
www.dataIsChEeSet4u.cZoemro Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1700V
500 µA
VGE = 15V
IC = 225A
Tj = 25°C
Tj = 125°C
2.0 2.4
2.4
V
VGE = VCE , IC = 4mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
20
0.8 nF
0.66
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 225A
RG = 3.3
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 225A
RG = 3.3
370
40
650
180
400
50
800
300
72
70.5
ns
ns
mJ
Diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM Maximum Reverse Leakage Current
IF(A V)
VF
Maximum Average Forward Current
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
Min Typ Max Unit
1700
V
VR=1700V
50% duty cycle
Tj = 25°C
Tj = 125°C
Tc = 80°C
500
750
µA
225 A
IF = 225A
IF = 225A
VR = 900V
di/dt =2400A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.8 2.2
1.9
V
385 ns
490
60 µC
96
APT website – http://www.advancedpower.com
2-5


Part Number APTGT225DU170
Description Dual common source Trench Field Stop IGBT Power Module
Maker Advanced Power Technology
Total Page 5 Pages
PDF Download
APTGT225DU170 pdf
APTGT225DU170 Datasheet PDF
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