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Advanced Semiconductor
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SD1526-08 Datasheet Preview

SD1526-08 Datasheet

NPN SILICON RF POWER TRANSISTOR

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SD1526-08 pdf
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SD1526-08
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1526-08 is a Common
Base Device Designed for IFF, DME,
and Tacan Pulse Applications.
FEATURES INCLUDE:
Gold Metalization
Input Matching
Low Thermal Resistance
MAXIMUM RATINGS
IC 1.0 A
VCES
45 V
PDISS
21.9 W @ TC = 25 °C
TJ -55 °C to +200 °C
TSTG
-55 °C to +150 °C
θJC 8.0 °C/W
PACKAGE STYLE 250 2L FLG (A)
1 = COLLECTOR 2 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCBO
IC = 1.0 mA
BVCEO
IC = 5.0 mA
BVCES
IC = 5.0 mA
BVEBO
IE = 1.0 mA
ICES VCE = 28 V
hFE VCE = 5.0 V IC = 100 mA
MINIMUM TYPICAL MAXIMUM
45
45
45
3.5
1.0
10 200
UNITS
V
V
V
V
mA
---
PG
VCE = 28 V Pout = 5.0 W f = 1025 to 1150 MHz
9.5
PULSE WIDTH =10 µS
DUTY CYCLE =1.0%
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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REV. A
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Part Number SD1526-08
Description NPN SILICON RF POWER TRANSISTOR
Maker Advanced Semiconductor
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