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Alliance Semiconductor Corporation
Alliance Semiconductor Corporation

AS7C332MNTF18A Datasheet Preview

AS7C332MNTF18A Datasheet

3.3V 2M x 18 Flowthrough SRAM

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AS7C332MNTF18A pdf
December 2004
AS7C332MNTF18A
®
3.3V 2M x 18 Flowthrough SRAM with NTDTM
Features
• Organization: 2,097,152 words × 18 bits
• NTDarchitecture for efficient bus operation
• Fast clock to data access: 7.5/8.5/10 ns
• Fast OE access time: 3.5/4.0 ns
• Fully synchronous operation
• Flow-through mode
• Asynchronous output enable control
• Available in 100-pin TQFP package
www.DataSheet4U.com
• Byte write enables
• Clock enable for operation hold
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate VDDQ
• Self-timed write cycles
• Interleaved or linear burst modes
• Snooze mode for standby operation
Logic block diagram
A[19:0]
20
CE0
CE1
CE2
R/W
BWa
BWb
ADV / LD
LBO
ZZ
DQ
Aredgdirsetesrs
burst logic
CLK
Control
logic
CLK
DQ [a,b]
18
D
Data
input
Q
register
CLK
20
DQ
Write delay
addr. registers
CLK
20
CLK
2M x 18
SRAM
array
18
18 18
CLK
CEN
Selection guide
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
OE
-75
8.5
7.5
325
140
90
18
Output
buffer
OE
18
DQ [a,b]
-85
10
8.5
300
130
90
-10
12
10
375
130
90
Units
ns
ns
mA
mA
mA
12/23/04, v 1.2
Alliance Semiconductor
P. 1 of 18
Copyright © Alliance Semiconductor. All rights reserved.



Alliance Semiconductor Corporation
Alliance Semiconductor Corporation

AS7C332MNTF18A Datasheet Preview

AS7C332MNTF18A Datasheet

3.3V 2M x 18 Flowthrough SRAM

No Preview Available !

AS7C332MNTF18A pdf
32 Mb Synchronous SRAM products list1,2
Org Part Number
2MX18
AS7C332MPFS18A
1MX32
AS7C331MPFS32A
1MX36
AS7C331MPFS36A
2MX18
AS7C332MPFD18A
1MX32
AS7C331MPFD32A
1MX36
AS7C331MPFD36A
2MX18
AS7C332MFT18A
www.DataSheet4U.com1MX32
1MX36
AS7C331MFT32A
AS7C331MFT36A
2MX18
AS7C332MNTD18A
1MX32
AS7C331MNTD32A
1MX36
AS7C331MNTD36A
2MX18
AS7C332MNTF18A
1MX32
AS7C331MNTF32A
1MX36
AS7C331MNTF36A
1 Core Power Supply: VDD = 3.3V + 0.165V
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O
VDDQ = 2.5V + 0.125V for 2.5V I/O
®
Mode
PL-SCD
PL-SCD
PL-SCD
PL-DCD
PL-DCD
PL-DCD
FT
FT
FT
NTD-PL
NTD-PL
NTD-PL
NTD-FT
NTD-FT
NTD-FT
PL-SCD : Pipelined Burst Synchronous SRAM - Single Cycle Deselect
PL-DCD : Pipelined Burst Synchronous SRAM - Double Cycle Deselect
FT : Flow-through Burst Synchronous SRAM
NTD1-PL : Pipelined Burst Synchronous SRAM with NTDTM
NTD-FT : Flow-through Burst Synchronous SRAM with NTDTM
AS7C332MNTF18A
Speed
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
7.5/8.5/10 ns
7.5/8.5/10 ns
7.5/8.5/10 ns
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
7.5/8.5/10 ns
7.5/8.5/10 ns
7.5/8.5/10 ns
1. NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property
of their respective owners.
12/23/04, v 1.2
Alliance Semiconductor
P. 2 of 18


Part Number AS7C332MNTF18A
Description 3.3V 2M x 18 Flowthrough SRAM
Maker Alliance Semiconductor Corporation
Total Page 18 Pages
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AS7C332MNTF18A pdf
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1 AS7C332MNTF18A 3.3V 2M x 18 Flowthrough SRAM Alliance Semiconductor Corporation
Alliance Semiconductor Corporation
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