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Alliance Semiconductor Corporation
Alliance Semiconductor Corporation

AS7C33512FT36A Datasheet Preview

AS7C33512FT36A Datasheet

(AS7C33512FT32A / AS7C33512FT36A) 3.3V 512K x 32/36 Flow-through synchronous SRAM

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AS7C33512FT36A pdf
December 2004
AS7C33512FT32A
AS7C33512FT36A
®
3.3V 512K × 32/36 Flow-through synchronous SRAM
Features
• Organization: 524,288 words × 32 or 36 bits
• Fast clock to data access: 7.5/8.5/10 ns
• Fast OE access time: 3.5/4.0 ns
• Fully synchronous flow-through operation
• Asynchronous output enable control
• Available in 100-pin TQFP packages
• Individual byte write and global write
• Multiple chip enables for easy expansion
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• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate VDDQ
• Linear or interleaved burst control
• Snooze mode for reduced power-standby
• Common data inputs and data outputs
Logic block diagram
CLK
ADV
ADSC
ADSP
A[18:0]
GWE
BWE
BWd
BWc
BWb
BWa
CE0
CE1
CE2
ZZ
OE
LBO
CLK
CE
Q0
Burst logic
19
CLR
D
Q1
Q 19
17
19
512K × 32/36
Memory
array
CCLEKAredgdisrteesrs
D BytDeQwdriteQ
registers
CLK
D DQc Q
Byte write
registers
CLK
DBytDeQwbriteQ
registers
CLK
DBytDeQwariteQ
registers
CLK
36/32
36/32
4
Power
down
DQ
Enable
CE register
CLK
D Enable Q
delay
register
CLK
OE
Output
buffer
Input
registers
CLK
36/32
DQ[a:d]
Selection guide
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
-75 -85
8.5 10
7.5 8.5
275 250
90 80
60 60
-10
12
10
230
80
60
Units
ns
ns
mA
mA
mA
12/23/04, v 1.4
Alliance Semiconductor
1 of 19
Copyright © Alliance Semiconductor. All rights reserved.



Alliance Semiconductor Corporation
Alliance Semiconductor Corporation

AS7C33512FT36A Datasheet Preview

AS7C33512FT36A Datasheet

(AS7C33512FT32A / AS7C33512FT36A) 3.3V 512K x 32/36 Flow-through synchronous SRAM

No Preview Available !

AS7C33512FT36A pdf
®
16 Mb Synchronous SRAM products list1,2
Org Part Number
1MX18
AS7C331MPFS18A
512KX32
AS7C33512PFS32A
512KX36
AS7C33512PFS36A
1MX18
AS7C331MPFD18A
512KX32
AS7C33512PFD32A
512KX36
AS7C33512PFD36A
1MX18
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512KX32
AS7C331MFT18A
AS7C33512FT32A
512KX36
AS7C33512FT36A
1MX18
AS7C331MNTD18A
512KX32
AS7C33512NTD32A
512KX36
AS7C33512NTD36A
1MX18
AS7C331MNTF18A
512KX32
AS7C33512NTF32A
512KX36
AS7C33512NTF36A
1 Core Power Supply: VDD = 3.3V + 0.165V
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O
VDDQ = 2.5V + 0.125V for 2.5V I/O
Mode
PL-SCD
PL-SCD
PL-SCD
PL-DCD
PL-DCD
PL-DCD
FT
FT
FT
NTD-PL
NTD-PL
NTD-PL
NTD-FT
NTD-FT
NTD-FT
PL-SCD : Pipelined Burst Synchronous SRAM - Single Cycle Deselect
PL-DCD : Pipelined Burst Synchronous SRAM - Double Cycle Deselect
FT : Flow-through Burst Synchronous SRAM
NTD1-PL : Pipelined Burst Synchronous SRAM with NTDTM
NTD-FT : Flow-through Burst Synchronous SRAM with NTDTM
AS7C33512FT32A
AS7C33512FT36A
Speed
166/133 MHz
166/133 MHz
166/133 MHz
166/133 MHz
166/133 MHz
166/133 MHz
7.5/8.5/10 ns
7.5/8.5/10 ns
7.5/8.5/10 ns
166/133 MHz
166/133 MHz
166/133 MHz
7.5/8.5/10 ns
7.5/8.5/10 ns
7.5/8.5/10 ns
1NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property of
their respective owners.
12/23/04, v 1.4
Alliance Semiconductor
2 of 19


Part Number AS7C33512FT36A
Description (AS7C33512FT32A / AS7C33512FT36A) 3.3V 512K x 32/36 Flow-through synchronous SRAM
Maker Alliance Semiconductor Corporation
Total Page 19 Pages
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1 AS7C33512FT36A (AS7C33512FT32A / AS7C33512FT36A) 3.3V 512K x 32/36 Flow-through synchronous SRAM Alliance Semiconductor Corporation
Alliance Semiconductor Corporation
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